doping gradient

By using the definition of effective doping concentration gradient and depletion approximation, an analytical solution for avalanche breakdown voltage of double sided asymmetric linearly graded junction has been derived.

通过有效掺杂浓度梯度的定义和耗尽近似求解，得到非对称线性缓变结击穿电压的简洁表达式。

A novel structure of ideal ohmic contact p+ ( SiGeC)-n& n+ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized.

将新器件结构与新型半导体材料相结合，提出了一种新型的n-区三层渐变掺杂理想欧姆接触型p+（SiGeC）-n&n+异质结功率二极管，并对n-区的杂质分布梯度进行了优化。

Computer simulation of the stationary domain in a Gunn diode with a positive doping gradient near the anode

Gunn器件中掺杂梯度引起的静止畴的计算机模拟

However, as elevating doping gradient and reducing the medium thickness, the intensity of ASE effect will rises and depress the gain efficiency.

但是，随着掺杂浓度梯度的升高与介质片厚的降低，介质的增益水平将由于ASE效应降低。

Study on the Al/ Ag doping functional gradient thin films deposited by pulsed excimer laser

脉冲激光沉积Al/Ag掺杂功能梯度薄膜